Isolated films using an air dielectric

Details Isolated films using an air dielectric Isolated films using an air dielectric

1991-10-23

1993-08-03

Fourson, George

Fishing, trapping, and vermin destroying

437927, 156655, H01L 2176

Patent

active

052328660

ABSTRACT:
A method for isolating a film from a substrate 50 includes the steps of: providing an N+ layer 52 on the substrate 50; forming an insulation layer 54 onto the N+ doped layer 52; etching a pair of trenches 56, 58 through the insulation layer 52 to thereby form an isolation region 60 of insulation material; laterally etching a cavity 62 underneath the isolation region; and, forming a film 64 onto the isolation region.

REFERENCES:
patent: 4502913 (1985-05-01), Lechaton et al.
patent: 4661832 (1987-04-01), Lechaton et al.
patent: 4888300 (1989-12-01), Burton
patent: 4925805 (1990-05-01), Van Ommen et al.
"A New SOI Fabrication Technique for Ultrathin Active Layer of Less Than 89 nm", by Horie, et al., 1990 Symposium on VLSI Technology.

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