Isolated bipolar transistor

Details Isolated bipolar transistor Isolated bipolar transistor

2011-01-11

2011-01-11

Weiss, Howard (Department: 2814)

Active solid-state devices (e.g., transistors, solid-state diode

Integrated circuit structure with electrically isolated...

Including dielectric isolation means

C257S511000, C257SE29174, C257SE27053

Reexamination Certificate

active

07868414

ABSTRACT:
A bipolar transistor is formed in an isolation structure comprising a floor isolation region, a dielectric filled trench above the floor isolation region and a sidewall isolation region extending downward from the bottom of the trench to the floor isolation region. This structure provides a relatively deep isolated pocket in a semiconductor substrate while limiting the depth of the trench that must be etched in the substrate.

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