Electrical transmission or interconnection systems – Nonlinear reactor systems – Parametrons
Patent
1985-05-13
1991-06-11
Larkins, William D.
Electrical transmission or interconnection systems
Nonlinear reactor systems
Parametrons
307458, 357 15, 357 44, 357 46, 357 92, H03K 19091, H01L 27082
Patent
active
050234820
ABSTRACT:
An ISL clamped NPN transistor and a PNP interface transistor are merged together in a single semiconductive isolation island. The two transistors are laterally separated from each other along a semiconductive surface of the island, which also includes one or more metallic elements forming individual Schottky barrier contact diodes with the semiconductive surface. The PNP transistor provides translation between an ISL logic gate and a TTL logic gate. One of the Schottky diodes may be used in combination with the NPN transistor as an active pulldown for an output transistor of the TTL logic gate.
REFERENCES:
patent: 4110634 (1978-08-01), Tokumaru
patent: 4322640 (1982-03-01), Fukushima et al.
patent: 4328509 (1982-05-01), Lehning
patent: 4330723 (1982-05-01), Griffith
patent: 4339676 (1982-07-01), Ramsey
Lohstroh, IEEE J. of Solid State Circuits, vol. SC 14, No. 3, Jun. 1979, pp. 585-590.
Larkins William D.
Meetin R.
North American Philips Corp.
Tamoshunas A.
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