Semiconductor device manufacturing: process – Making device or circuit responsive to nonelectrical signal – Chemically responsive
Reexamination Certificate
2006-06-27
2006-06-27
Fourson, George (Department: 2823)
Semiconductor device manufacturing: process
Making device or circuit responsive to nonelectrical signal
Chemically responsive
C204S419000, C204S420000
Reexamination Certificate
active
07067343
ABSTRACT:
Methods for fabricating ion sensitive field effect transistors (ISFETs) with SnO2extended gates. A SnO2detection film is formed on a substrate by sol-gel technology to serve as an extended gate. The SnO2detection film is electrically connected to a conductive wire, and an insulating layer is formed on the surface of the ISFET but part of the SnO2detection film and the conductive wire are left exposed. The exposed conductive wire is electrically connected to a gate terminal of a MOS transistor.
REFERENCES:
patent: 4397714 (1983-08-01), Janata et al.
patent: 4641084 (1987-02-01), Komatsu
patent: 5240586 (1993-08-01), Moore et al.
patent: 5309085 (1994-05-01), Sohn
patent: 5384028 (1995-01-01), Ito
patent: 5911873 (1999-06-01), McCarron et al.
patent: 5925318 (1999-07-01), Kruzel et al.
patent: 6218208 (2001-04-01), Chou et al.
patent: 6251246 (2001-06-01), Chan
patent: 6326215 (2001-12-01), Keen
patent: 6409909 (2002-06-01), Spichiger-Keller et al.
Chen Zhi Jie
Chou Jung-Chuan
Liu Shih I
Fourson George
Maldonado Julio J.
National Yunlin University of Science and Technology
Thomas Kayden Horstemeyer & Risley
LandOfFree
ISFETs fabrication method does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with ISFETs fabrication method, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and ISFETs fabrication method will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-3617269