ISFET sensor and method of manufacture

Details ISFET sensor and method of manufacture ISFET sensor and method of manufacture

1984-07-16

1985-03-19

Kaplan, G. L.

Chemistry: electrical and wave energy

Apparatus

Electrolytic

29571, 29576W, 29580, 29589, 29591, 204433, 357 25, H01L 2160, G01N 2730

Patent

active

045057990

ABSTRACT:
There is provided an ISFET structure and a method for manufacturing that structure such that external electrical contact to the P+ source and drain regions is made through individual holes etched from the back to the source and drain regions with sidewall isolation being provided in the holes and metallization covering the surface of said sidewalls and extending to contact pads on the back of the ISFET.

REFERENCES:
L. A. D'Asaro et al., IEEE Trans., vol. ED-25, No. 10, pp. 1218-1221, Oct. 1978.
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Roy A. Colclaser, "Microelectronics: Processing and Device Design", p. 198, (1980).
Jay N. Zemel, Research/Development, vol. 28, No. 4, pp. 38, 39, 41, 42, 44, (1977).
P. W. Cheung et al., "Theory, Design and Biomedical Applications of Solid State Sensors, pp. 91-115, (1978).
J. C. M. Huang et al., IEEE Proc. IEDM Meeting, Dec. 13-15, 1982, Pub. Jan.-Feb. 1983.
Ching-Chang Wen, Graduate Dissertation, U. of Pa., pp. 19 and 36, (1979).
T. Matsuo et al., Sensors and Actuators, 1, pp. 77-96, (1981).
P. Bergveld et al., Sensors and Actuators, 1, pp. 5-15, (1981).
A. Reisman et al., J. Electrochem. Soc., Solid State Science & Tech., pp. 1406-1415, (1979).
H. S. Gamble et al., J. Electrochem. Soc., pp. 990-992, Apr. 1980.
A. Bohg, J. Electrochem. Soc., Electrochem. Technol., pp. 401-402, Feb. 1971.
T. O. Sedgwick et al., J. Electrochem. Soc., Solid State Science & Technol., pp. 1769-1771, Dec. 1972.

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