Irreversible semiconductor switching element and semiconductor m

Details Irreversible semiconductor switching element and semiconductor m Irreversible semiconductor switching element and semiconductor m

1978-06-20

1979-03-27

Wojciechowicz, Edward J.

357 23, 357 41, 357 51, 357 59, H01L 4902

Patent

active

041469020

ABSTRACT:
A semiconductor switching element comprised by a high resistivity polycrystalline silicon resistor whose resistance irreversibly decreases to a small value at a threshold voltage upon the voltage across the resistor reaching the threshold voltage. A semiconductor memory device is constituted by using the switching element as a memory cell and a semiconductor gate element for controlling the current flowing through the semiconductor switching element.

REFERENCES:
patent: 3792319 (1974-02-01), Tsang
patent: 3889358 (1975-06-01), Bierhenke
patent: 4001762 (1977-01-01), Aoki et al.

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