Active solid-state devices (e.g. – transistors – solid-state diode – Integrated circuit structure with electrically isolated... – Passive components in ics
Reexamination Certificate
2003-02-11
2008-09-23
Pert, Evan (Department: 2826)
Active solid-state devices (e.g., transistors, solid-state diode
Integrated circuit structure with electrically isolated...
Passive components in ics
C438S466000, C438S467000, C338S020000
Reexamination Certificate
active
07427802
ABSTRACT:
The invention relates to a method and device for the irreversible reduction of the value of an integrated polycrystalline silicon resistor. The inventive method consists in temporarily subjecting the resistor to a stress current which is greater than a current (Im) for which the value of the resistor is maximum.
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Bardouillet Michel
Malherbe Alexandre
Wuidart Luc
Jorgenson Lisa K.
Morris James H.
STMicroelectronics S.A.
Wolf Greenfield & Sacks P.C.
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