Irradiation system with ion beam/charged particle beam

Details Irradiation system with ion beam/charged particle beam Irradiation system with ion beam/charged particle beam

2005-08-12

2008-09-09

Berman, Jack I. (Department: 2881)

Radiant energy

Irradiation of objects or material

Irradiation of semiconductor devices

C250S492100, C250S492300, C250S3960ML, C250S3960ML, C250S492210, C250S400000

Reexamination Certificate

active

07423276

ABSTRACT:
In an irradiation system with an ion beam/charged particle beam, an ion beam/charged particle beam is deflected by an energy filter for the energy analysis and then a wafer irradiated with the beam. The energy filter controls the spread of magnetic field distribution caused by a deflection magnet, cancels a leakage magnetic field in the longitudinal direction, and bends the ion beam/charged particle beam at a uniform angle at any positions overall in scanning-deflection area.

REFERENCES:
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patent: 6835930 (2004-12-01), Benveniste et al.
patent: 7276711 (2007-10-01), Kawaguchi et al.
patent: 7315034 (2008-01-01), Yagita et al.
patent: 6-111759 (1994-04-01), None
patent: 10-302706 (1998-11-01), None
patent: 10-302707 (1998-11-01), None

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