Irradiation for rapid turn-off reverse blocking diode thyristor

Details Irradiation for rapid turn-off reverse blocking diode thyristor Irradiation for rapid turn-off reverse blocking diode thyristor

1976-05-17

1978-02-28

Ozaki, G.

Metal treatment

Compositions

Heat treating

148 335, 148187, H01L 21263

Patent

active

040765555

ABSTRACT:
The turn-off time of a reverse blocking diode thyristor is decreased without significantly effecting other electrical characteristics by irradiating with a radiation source to a dosage corresponding to between about 4 .times. 10.sup.13 and about 2 .times. 10.sup.14 electrons/cm.sup.2 and preferably to between about 6 .times. 10.sup.13 and about 2 .times. 10.sup.14 electrons/cm.sup.2 with 2 MeV electron radiation source. Preferably the radiation source is electron radiation with an energy greater than 1 MeV.

REFERENCES:
patent: 3809582 (1974-05-01), Tarneja et al.
patent: 3881963 (1975-05-01), Chu et al.
patent: 3881964 (1975-05-01), Cresswell et al.

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