Electricity: circuit makers and breakers – Special application – Light responsive
Reexamination Certificate
1998-12-31
2001-04-24
Luebke, Renee (Department: 2833)
Electricity: circuit makers and breakers
Special application
Light responsive
Reexamination Certificate
active
06222141
ABSTRACT:
TECHNICAL FIELD
The present invention relates to a switch comprising at least a first layer of a first material and two contact electrodes arranged on the first layer on opposite sides thereof and connectable to different potentials for applying a voltage thereacross. The first layer is to be conducting upon applying a voltage across the contact electrodes when exposed to irradiation through an irradiation source of an energy high enough for lifting charge carriers from the valence band to the conduction band of the first material.
BACKGROUND OF THE INVENTION
A switch of this type finds many applications, and it may for instance be used in equipment for handling high electric power for switching high voltages (which may be 2-400 kV) and currents, for example in surge diverters, currents limiters, and the like. An advantage of a switch of this type is that irradiation control provides for very fast switching, which is of particular importance in high power applications for protection of equipment when faults occur.
One problem with such switches is that some materials which might be candidates to be used as the first material will have a columnar-grain structure and will accordingly be polycrystalline, although a mono-crystalline structure is preferable. These columns will extend substantially vertically between the two sides of the first layer, and as the contact electrodes are applied on opposite sides of the first layer, the grain boundaries formed by the columns may act as potential short-circuit paths between the contact electrodes thereby substantially reducing the breakdown field of the switch and increasing the intensity of leakage currents. This problem is, for example, there for CVD diamond, which it is very difficult to grow mono-crystalline, and the risk is high that impurities, e.g. graphite, are gathered in the grain boundaries, so that the level of the voltage across the contact electrodes which the switch will be conducting in the blocking (open) state will be reduced considerably.
SUMMARY OF THE INVENTION
The object of the present invention is to provide a switch of the type defined in the introduction herein which is, in at least some aspect, improved with respect to switches of this already known type.
This object is, according to the invention, obtained by laterally displacing the contact electrode arranged on the first side of the first layer with respect to the contact electrode that is arranged on the opposite second side of the layer with a lateral distance separating them.
This means that the current paths from one contact to the other will have a lateral component, so that the current for materials with a columnar-grain structure will be trans-granular, i.e. the grain boundaries will not act as short-circuit paths between the contacts. This will also contribute to the ability of the switch to hold higher voltages in the blocking (open) state thereof and increase the reliability of the switch. The arrangement of the contact electrodes laterally displaced in this way but arranged on opposite sides of the first layer, results in a solution to the problem of grain columns, if there, while still avoiding problems of field control for avoiding risks of flash-over which would result if the contact electrodes were arranged on the same side of the first layer for solving the problem associated with the columnar-grain structure. Furthermore, the lateral displacement of the contact electrodes with respect to each other results in a larger distance therebetween than in the case of no such displacement, which means a capability of such a switch to hold a higher voltage in the blocking state thereof for a given thickness of the first layer.
According to a preferred embodiment of the invention the shortest lateral distance between the two contact electrodes is substantial, which advantageously ensures that a current will be trans-granular for a material with a columnar-grain structure.
According to another preferred embodiment of the invention, the irradiation source is adapted to irradiate the first layer from opposite directions on the first as well as second sides. The fact that the contact electrodes are laterally displaced with respect to each other means that there have to be surfaces on both sides of the first layer not covered by any portions of the respective contact electrode. This which means that they will be reached by the irradiation without the necessity to irradiate through the contact electrode, which is a condition for using light for the irradiation. Furthermore, thanks to the lateral displacement of the contact electrodes, it will in this way be possible to irradiate all the surfaces of the first layer, thereby forming interfaces to the respective contact electrode through the irradiation from the opposite side of the first layer, so that a lower overall resistance of the switch is obtained. This will result from, among other things, a reduction of the contact barrier as a consequence of the illumination of the contacts.
According to another preferred embodiment of the invention the irradiation source is adapted to apply light on the first layer. The particular advantages of the switch according to the invention in connection with the use of light for irradiation appear from the previous paragraph. Furthermore, light is preferred for irradiation, since it may penetrate deeply into the first layer without causing any damage, and the first layer may therefore by made rather thick when light is used for controlling the switch, so that the switch may hold a high voltage in the blocking (open) state thereof.
According to another preferred embodiment of the invention, the irradiation source is adapted to irradiate the first layer by accelerated electrons. In such a case, it is not necessary to irradiate the first layer from both sides, since the electrons are able to penetrate the contact electrodes and will therefore reach the interface between the contact electrode and the first layer also on the side irradiated.
According to another preferred embodiment of the invention, each contact electrode has a plurality of contact portions arranged with lateral spacings, and according to further preferred developments of this embodiment each contact electrode has, as seen from the vertical direction, a fork-like shape with teeth of each fork arranged in the space between adjacent fork teeth of the contact electrode. Alternatively, each contact electrode has ring-like contact portions being substantially concentrically applied on the first layer with lateral spacings, the ring-like portions of each contact electrode being arranged in a radial space between two adjacent ring-like portions of the other contact electrode as seen from the vertical direction. These are preferred ways of obtaining the current paths with lateral components and a possibility to use light for irradiation and still reach all interfaces between the contact electrodes and the first layer. These structures also involve the possibility to maintain a comparatively large active area, i.e. the area which may be reached by charge carriers in the conducting state of the switch, of the contact electrodes, so that the contact resistance contribution to the total resistance of the switch may be kept at a low level.
According to another preferred embodiment of the invention the first layer is made of an intrinsic material, and the switch is adapted to be conducting when the first layer is irradiated and a voltage is applied across the contact electrodes thereof irrespectively of the direction of the voltage and in a blocking state when no irradiation of the first layer takes place, in which it is advantageous to use a wide bandgap material as the first material, i.e. a material having an energy gap between the valence band and the conduction band thereof of at least 2,5 eV, since this means that the switch will be able to hold very high voltages in the blocking state thereof. It is particularly interesting to use diamond as such material of the first layer thanks to the large energy gap between the v
Johansson Erik
Skytt Per
Asea Brown Boveri AB
Connolly Bove & Lodge & Hutz LLP
Luebke Renee
LandOfFree
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