Iron oxide magnetic film and process for fabrication thereof

Coating processes – Electrical product produced – Integrated circuit – printed circuit – or circuit board

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204192M, 252 6256, 427 48, 427128, 427130, 427131, 427132, 4273722, 427380, 4274193, C23C 1500

Patent

active

046422455

ABSTRACT:
.gamma.-Fe.sub.2 O.sub.3 film added at least one selected from the group consisting of Pd, Au, Pt, Rh, Ag, Ru, Ir, Os as additive, especially Os are disclosed. Reduction from .alpha.-Fe.sub.2 O.sub.3 to Fe.sub.3 O.sub.4 is accelerated by additive Os to accompany to a uniform reduction and increased the ratio of magnetic phase in the film. .gamma.-Fe.sub.2 O.sub.3 film medium added Os improves the saturation magnetization and increases the coercive force in proportion to amount of additive Os. Application of an external field to said film introduced magnetic anisotropy into said film, therefore said film medium improves coercive force and squareness of hysteresis loop by the grant of anisotropy. .gamma.-Fe.sub.2 O.sub.3 crystal grain is prepared by additive Os to obtained fine grain. The resultant .gamma.-Fe.sub.2 O.sub.3 film medium decreases the noise.

REFERENCES:
patent: 3996095 (1976-12-01), Ahn et al.
patent: 4003813 (1977-01-01), Hattori et al.
patent: 4013534 (1977-03-01), Ishii et al.
patent: 4215158 (1980-07-01), Hattori et al.
patent: 4232061 (1980-11-01), Hattori et al.
patent: 4232071 (1980-11-01), Terada et al.
patent: 4533582 (1985-08-01), DePalma et al.
Yoshii et al; "High Density Recording Characteristics of Sputtered .gamma.-Fe.sub.2 O.sub.3 Thin-Film Disks" J. App. Phys. 53(3), Mar. 1982, p. 2556.

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