Iron-doped indium phosphide semiconductor laser

Details Iron-doped indium phosphide semiconductor laser Iron-doped indium phosphide semiconductor laser

1978-03-27

1979-06-12

Edlow, Martin H.

Oscillators

Relaxation oscillators

357 63, 331 945H, H01S 3319

Patent

active

041582071

ABSTRACT:
An iron-doped indium phosphide or gallium arsenide semiconductor laser. The emiconductor material is doped when formed by uniformly distributing transition metal ions such as iron throughout the semiconductor. The concentration of the iron ions is from about 1.times.10.sup.15 to about 1.times.10.sup.18 ions per cubic centimeter, but is limited only by the solubility of iron indium phosphide or gallium arsenide. It has been determined that the greater the concentration of ions, the easier the laser emission is obtained. At liquid helium temperature, the iron-doped semiconductor laser will operate at a wavelength near 3 microns.

REFERENCES:
patent: 4055815 (1977-10-01), Smith

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