Semiconductor device manufacturing: process – Chemical etching – Vapor phase etching
Reexamination Certificate
2006-08-29
2006-08-29
Estrada, Michelle (Department: 2823)
Semiconductor device manufacturing: process
Chemical etching
Vapor phase etching
C257S043000, C257SE23025, C977S811000, C977S840000
Reexamination Certificate
active
07098144
ABSTRACT:
A method is provided for forming iridium oxide (IrOx) nanotubes. The method comprises: providing a substrate; introducing a (methylcyclopentadienyl)(1,5-cyclooctadiene)iridium(I) precursor; introducing oxygen as a precursor reaction gas; establishing a final pressure in the range of 1 to 50 Torr; establishing a substrate, or chamber temperature in the range of 200 to 500 degrees C.; and using a metalorganic chemical vapor deposition (MOCVD) process, growing IrOx hollow nanotubes from the substrate surface. Typically, the (methylcyclopentadienyl)(1,5-cyclooctadiene)iridium(I) precursor is initially heated in an ampule to a first temperature in the range of 60 to 90 degrees C., and the first temperature is maintained in the transport line introducing the precursor. The precursor may be mixed with an inert carrier gas such as Ar, or the oxygen precursor reaction gas may be used as the carrier.
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Barrowcliff Robert A.
Hsu Sheng Teng
Stecker Gregory M.
Zhang Fengyan
Estrada Michelle
Law Office of Gerald Maliszewski
Maliszewski Gerald
Sharp Laboratories of America Inc.
Tobergte Nicholas J.
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