Semiconductor device manufacturing: process – Chemical etching – Vapor phase etching
Reexamination Certificate
2006-04-04
2006-04-04
Coleman, W. David (Department: 2823)
Semiconductor device manufacturing: process
Chemical etching
Vapor phase etching
Reexamination Certificate
active
07022621
ABSTRACT:
A method is provided for patterning iridium oxide (IrOx) nanostructures. The method comprises: forming a substrate first region adjacent a second region; growing IrOx nanostructures from a continuous IrOx film overlying the first region; simultaneously growing IrOx nanostructures from a non-continuous IrOx film overlying the second region; selectively etching areas of the second region exposed by the non-continuous IrOx film; and, lifting off the IrOx nanostructures overlying the second region. Typically, the first region is formed from a first material and the second region from a second material, different than the first material. For example, the first material can be a refractory metal, or refractory metal oxide. The second material can be SiOx. The step of selectively etching areas of the second region exposed by the non-continuous IrOx film includes exposing the substrate to an etchant that is more reactive with the second material than the IrOx.
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Barrowcliff Robert A.
Hsu Sheng Teng
Stecker Gregory M.
Zhang Fengyan
Coleman W. David
Law Office of Gerald Maliszewski
Maliszewski Gerald
Sharp Laboratories of America Inc.
Tobergte Nicholas J.
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