Iridium oxide nanostructure

Details Iridium oxide nanostructure Iridium oxide nanostructure

2006-05-30

2006-05-30

Coleman, W. David (Department: 2823)

Active solid-state devices (e.g., transistors, solid-state diode

Semiconductor is an oxide of a metal or copper sulfide

C438S734000

Reexamination Certificate

active

07053403

ABSTRACT:
A method is provided for patterning iridium oxide (IrOx) nanostructures. The method comprises: forming a substrate first region adjacent a second region; growing IrOx nanostructures from a continuous IrOx film overlying the first region; simultaneously growing IrOx nanostructures from a non-continuous IrOx film overlying the second region; selectively etching areas of the second region exposed by the non-continuous IrOx film; and, lifting off the IrOx nanostructures overlying the second region. Typically, the first region is formed from a first material and the second region from a second material, different than the first material. For example, the first material can be a refractory metal, or refractory metal oxide. The second material can be SiOx. The step of selectively etching areas of the second region exposed by the non-continuous IrOx film includes exposing the substrate to an etchant that is more reactive with the second material than the IrOx.

REFERENCES:
Reui-san Chen, Growth of IrO2 Films and Nanorods by means of CVD: An Example of Compositionand Morphological Control of Nanostructures, Nov. 11, 2002, Chemical Vapour Deposition 2003, 9, No. 6, pp. 301-305.

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