Iridium etching for FeRAM applications

Details Iridium etching for FeRAM applications Iridium etching for FeRAM applications

2007-09-11

2007-09-11

Smoot, Stephen W. (Department: 2813)

Semiconductor device manufacturing: process

Having magnetic or ferroelectric component

C438S240000, C438S656000, C438S686000, C438S720000

Reexamination Certificate

active

10923165

ABSTRACT:
A method of etching an iridium layer for use in a ferroelectric device includes preparing a substrate; depositing a barrier layer on the substrate; depositing an iridium layer on the barrier layer; depositing a hard mask layer on the iridium layer; depositing, patterning and developing a photoresist layer on the hard mask; etching the hard mask layer; etching the iridium layer using argon, oxygen and chlorine chemistry in a high-density plasma reactor; and completing the ferroelectric device.

REFERENCES:
patent: 6323132 (2001-11-01), Hwang et al.
patent: 6492222 (2002-12-01), Xing
patent: 6602720 (2003-08-01), Hsu et al.
patent: 2003/0059720 (2003-03-01), Hwang et al.

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