IR imaging array and method of making same

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357 15, 357 30, 357 52, H01L 2978

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046383450

ABSTRACT:
An array of infra-red (IR) detectors for a CCD image sensor includes a plurality of spaced areas of a conductive material at the surface of a substrate of semiconductor material of one conductivity type with each conductive area forming a Schottky-barrier diode with the substrate to form the IR detectors. Each detector includes a high conductivity contact region within the substrate. Between the detector area is a guard band which consists of a region of a conductivity type opposite to that of the substrate within the substrate and around said detector area. The guard band is spaced from the contact regions and each conductive area overlaps a portion of its adjacent guard band.

REFERENCES:
patent: 4040076 (1977-08-01), Kosonocky et al.
patent: 4063964 (1977-12-01), Peressini et al.
patent: 4089020 (1978-05-01), Ikeda et al.
patent: 4119446 (1978-10-01), Mastroianni
patent: 4261095 (1981-04-01), Dreves et al.
patent: 4533933 (1985-08-01), Pellegrini et al.
"Design and Performance of 64.times.128 Element PtSi Schottky-Barrier Infrared Charge-Coupled Device (IRCCD) Focal Plane Array" by W. F. Kosonocky et al., SPIE Vol. 344, Infrared Sensor Technology, (1982), pp. 66-77.

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