IPG transistor semiconductor integrated circuit device

Details IPG transistor semiconductor integrated circuit device IPG transistor semiconductor integrated circuit device

1993-12-20

1995-09-12

Jackson, Jerome

Active solid-state devices (e.g., transistors, solid-state diode

Heterojunction device

Field effect transistor

257195, 257276, H01L 2980

Patent

active

054499291

ABSTRACT:
A method of producing on a substrate an in-plane-gate transistor includes producing a channel portion in which a quasi-one-dimensional conductive channel electrically connecting a source region and a drain region is generated and producing gate portions, each portion including a gate electrode layer for controlling generation and forfeiture of the quasi-one-dimensional conductive channel so that an upper surface of the gate layer and the quasi-one-dimensional conductive channel are positioned substantially in the same plane, on both sides of the channel portion on the substrate. Gaps between the channel portion and the gate portions are controlled by side walls produced self-aligningly on the side wall surfaces of the channel portion. Thus, gaps of a high aspect ratio can be produced between the channel portion and the gate portions without being limited by the dry etching technique.

REFERENCES:
patent: 4989052 (1991-01-01), Okada et al.
patent: 4999682 (1991-03-01), Xu et al.
patent: 5185534 (1993-02-01), Sakamoto et al.
patent: 5270556 (1993-12-01), Shimura
Glazman et al., "Lateral Position Control of an Electron Channel in a Split-Gate Device", Semiconductor Science Technology 6 (1991) pp. 32-35.
Nieder et al, "One-Dimensional Lateral-Field-Effect Transistor With Trench Gate-Channel Insulation", Applied Physics Letters, vol. 57, No. 25, Dec. 1990, pp. 2695-2697.

Affiliated with

Also associated with

Rating

IPG transistor semiconductor integrated circuit device does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with IPG transistor semiconductor integrated circuit device, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and IPG transistor semiconductor integrated circuit device will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-407320