Ionized-cluster deposited on a substrate and method of depositin

Details Ionized-cluster deposited on a substrate and method of depositin Ionized-cluster deposited on a substrate and method of depositin

1975-10-23

1979-05-01

Pianalto, Bernard D.

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204192N, 219 1055R, 219 50, 219121R, 427 38, 427 42, 427 82, 427248R, 428542, C23C 1500

Patent

active

041524780

ABSTRACT:
The present ion source called "Vaporized-Metal Cluster Ion Source" is adapted to produce ionized vapor aggregate (ionized cluster) instead of atomic or molecular ions in conventional ion sources. Clusters consisting of 10.sup.2 -10.sup.3 atoms are formed by the adiabatic expansion due to the ejection into a high vacuum region through a nozzle of a heated crucible and ionized by electron bombardment. By "Ionized-Cluster Beam Deposition" using the ion source, fine-quality deposited films of many kinds of materials can be obtained on metal, semiconductor and insulator substrate with strong adhesion and with a fairly high deposition rate.

REFERENCES:
patent: 3793070 (1974-02-01), Schoolar
patent: 3847114 (1974-11-01), Kiyozumi
patent: 3912826 (1975-10-01), Kennedy

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