Ionized-cluster-beam deposition process for fabricating p-n junc

Details Ionized-cluster-beam deposition process for fabricating p-n junc Ionized-cluster-beam deposition process for fabricating p-n junc

1978-05-23

1979-07-17

Rutledge, L. Dewayne

Metal treatment

Process of modifying or maintaining internal physical...

Chemical-heat removing or burning of metal

136 89TF, 148 15, 148174, 204192N, 204192S, 204192EC, 427 39, 427 42, H01L 21203, C23C 1500

Patent

active

041614186

ABSTRACT:
A p-n junction type solid-state element having at least a pair of p-n junction type semiconductor layers formed of a p-type semiconductor and an n-type semiconductor joined with each other and a method of producing the same, in which the p-type semiconductor and n-type semiconductor are formed and joined by forming at least one of the semiconductors using what is called the ionized-cluster-beam deposition process which evaporates a material to be deposited to form a vapor, injects the vapor into a vacuum region to form clusters of atoms, ionizes the clusters and electrically accelerates ionized clusters onto a substrate thereby forming a layer thereon.

REFERENCES:
patent: 3406040 (1968-10-01), Da Silva et al.
patent: 3583361 (1971-06-01), Laudel
patent: 3912826 (1975-10-01), Kennedy
patent: 3974059 (1976-08-01), Murayama
patent: 4091138 (1978-05-01), Takagi et al.
patent: 4098919 (1978-07-01), Morimoto et al.
Yano et al., "Ionization of Nitrogen Cluster Beam" Japanese J. of Applied Physics, vol. 14, No. 4, Apr. 1975, pp. 526-532.

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