Electric heating – Metal heating – By arc
Patent
1998-10-30
2000-07-11
Walberg, Teresa
Electric heating
Metal heating
By arc
21912152, B23K 900
Patent
active
060876158
DESCRIPTION:
BRIEF SUMMARY
BACKGROUND OF THE INVENTION
1. Field of the Invention
The present invention refers to a device for large-area implantation of ions for an ion implantation unit.
2. Description of the Related Art
Ion sources are technically used in fields in which a large-area homogenous ion beam is required. This is the case e.g. in the fields of large-area ion implantation for doping semiconductors, tribology for surface hardening and ion beam-assisted coating. A device according to the generic clause is known from JP-A-2-20018.
In the field of ion implantation for highly integrated microelectronics there is a trend towards smaller ion energies in combination with larger implantation surfaces. The maximum integration with more than 10.sup.7 components per circuit requires a reduction of the pn junction depth. In CMOS technology, for example, an extremely large number of pn junctions having a depth of less than 100 nm is required for the drain and the source. The production of increasingly flatter pn junctions entails great technological difficulties especially in the case of an implantation of boron for p.sup.+ regions. The requirements which have to be fulfilled by ion implantation in this connection, e.g. a low ion energy, distinctly below 30 keV, a high ion current and a high throughput, a parallel beam with large implantation areas and a high homogeneity, are not fulfilled by the commercial units which are available at present.
A further performance characteristic for future semiconductor manufacturing devices is the integrability in so-called multi-compartment process units, which are also referred to as cluster systems. This necessitates the development of small process modules which can be supplied with process wafers by a central roboter. Such systems are advantageous insofar as a plurality of process steps can be carried out in one unit. Due to the increasing number of process steps carried out in semiconductor manufacturing processes and due to the higher requirements that are to be met as far as the flexibility of the production process is concerned, such units become more and more important. Conventional implantation units are not suitable for integration in a multi-compartment process unit because their dimensions are too large. The commercial units, which become more and more complex and expensive, also require a great deal of maintenance work and a large clean-room area, and this, in turn, results in high operating expenses.
In order to fulfil the above-mentioned requirements, a new ion beam technology is necessary. One possibility is offered by the so-called "plasma immersion ion implantation", abbreviated to PIII. In such units a plasma is formed in the implantation chamber by means of high-frequency electromagnetic excitations. The ion density in this area is normally 10.sup.10 to 10.sup.11 cm.sup.-3. By applying a negative voltage, which can amount to some kilovolts, the positive ions are accelerated from the plasma in the direction of a specimen to be processed. A PIII unit has a plurality of advantages, such as a high ion current, low processing costs, and it is a, compact system which requires little maintenance work and which is very suitable for use in multi-compartment process units.
Although the PIII process has already been known for a long time, it has not been able to gain acceptance in semiconductor-technology implantation processes up to now. The reasons for this are the diffuse energy distribution (energy contamination), the inhomogenous dose distribution and the contamination of the specimens with heavy metals or undesired kinds of ions.
Known ion sources for the generation of large-area ion beams are the high-frequency and the electron-cyclotron-resonance ion sources.
When high-frequency ion sources (RF ion sources) are used, the operating pressure is approx. 10.sup.-3 to 10.sup.-2 mbar. These ion sources are advantageous as far as their simple structural design and the small amount of power consumed are concerned. The high frequency is coupled in capacitively or inductively. If the plas
REFERENCES:
patent: 3924931 (1975-12-01), Cheo
patent: 4272319 (1981-06-01), Thode
patent: 4346301 (1982-08-01), Robinson et al.
patent: 4370175 (1983-01-01), Levatter
patent: 5198072 (1993-03-01), Garbriel
patent: 5396076 (1995-03-01), Kimura
patent: 5902462 (1999-05-01), Krauss
Patent Abstracts of Japan, 6-208837, Application No. 5-2817, E-1622 Oct. 28, 1994, vol. 18/No. 566, Plasma Drawing Grid of Ion Beam Processor, Int. Cl. H01J37/08, H01J27/02, Nippon Telegraph & Telephone Corp.
Patent Abstracts of Japan, Publication No. 08096742, Publication Date Dec. 4, 1996, Ion Implantation Device, Int. Cl. H01J37/317, Nissin Electric Co., Ltd.
Patent Abstracts of Japan, 2-20016, Jan. 23, 1990, Manufacture of Semiconductor Device, Int. Cl. H01L21/205, Seiko Epson Corp.
Patent Abstracts of Japan, 2-20017, Jan. 23, 1990, Vapor Grwoing Meethod For Rare Earth Element Added 111-V Compound Semiconductor, Int. Cl. H01L21/205, Nippon Telegraph & Telephone Corp.
Patent Abstracts of Japan, 2-20018, Jan. 23, 1990, Electrode Structure for Plasma Processor, Int. Cl. H01L21/22, M. Setetsuku K.K.
Patent Abstracts of Japan, 63-252341, Oct. 19, 1998, Grid, Int. Cl. H01J27/08, Nec Corp.
Patent Abstracts of Japan, 63-190228, Aug. 5, 1988, Single-Sheet Grid Member for Ion Source Device, Int. C. H01J27/08, Nippon Telegraph & Telephone Corp.
Patent Abstracts of Japan, 61-13542, Jan. 21, 1986, Ion Implantation Mask Device and Method of Implantation, Int. Cl. H01J37/317, Nippon Denshin Denwah Kosa.
Patent Abstracts of Japan, 61-13543, Jan. 21, 1986, Analysis Tube for Helium Leak Detector, H01J49/26, Shimazu Seisakusoh K.K.
Patent Abstracts of Japan, 61-13544, Jan. 21, 1986, Flash Lamp, Int. Cl. H01J61/54, Fuji Xerox K.K.
Ryssel Heiner
Schork Rainer
Fraunhofer-Gesellschaft Zur Forderung
Van Quang
Walberg Teresa
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