Ion sensor FET with surface treated metal gate

Details Ion sensor FET with surface treated metal gate Ion sensor FET with surface treated metal gate

1980-06-27

1984-05-01

Larkins, William D.

Chemistry: electrical and wave energy

Apparatus

Coating, forming or etching by sputtering

357 23, 357 54, 204 1T, 204419, H01L 2978, G01N 2730

Patent

active

044464746

ABSTRACT:
An ion sensor and more particularly ion sensitive field effect transistor comprising an inorganic film, and an impurity layer formed in at least surface layer of said inorganic film by thermal diffusion or ion implantation.

REFERENCES:
patent: 3831432 (1974-08-01), Cox
patent: 4180771 (1979-12-01), Guckel
patent: 4273636 (1981-06-01), Shimada et al.
patent: 4302530 (1981-11-01), Zemel
patent: 4305802 (1981-12-01), Koshiishi
Esashi et al., IEEE Trans. on Biomedical Engineering, (BME-25, No. 2, Mar. 1978), pp. 184-192.
Moss et al., IEEE Trans. on Biomedical Engineering, (BME25, No. 1), Jan. 1978, pp. 49-54.
Esashi et al., Suppl. to Journal of the Japan Society of Applied Physics, vol. 44, 1975, pp. 339-343.

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