Ion-sensitive photodetector

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357 25, 357 231, H01L 2714, H01L 3100, H01L 2702

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active

047928360

ABSTRACT:
A photodetector using a modified ion-sensitive field effect transistor has therein a layer of photoactive material. Upon exposure to a beam of light the photoactive material produces a charge-separation (with proton movement) therein which affects the drain current. The change in gate voltage to stabilizes the drain current is a measure of the intensity of the light input.

REFERENCES:
patent: 3873215 (1975-03-01), Quinlan
patent: 4411741 (1983-10-01), Janata
patent: 4488556 (1984-12-01), Ho
"Gate-Controlled Diode for Ionic Concentration Measurement" from the IEEE Transactions on Electron Devices, vol. ed. 26, No. 12, Dec. 79, pp. 1945-1951.
"Proton Ejection Accompanying Light Induced Electron Transfer Between Chlorophyll and Hydroquinone" from Photochemistry and Photobiology 1967, vol. 6, pp. 665-667.
"Proton Ejection Accompanying Light-Induced Electron Transfer in the Chlorophyll-Quinone System" from the Journal of Physical Chemistry, vol. 71, No. 12, pp. 113-114.
"Light Induced Proton Ejection and Electron Transfer in the Zinc Tetraphenylporphin-Benzoquinone System" from the Journal of Physical Chemistry, vol. 72, No. 5, pp. 1797-1999.
"Proton Movement Accompanying the Light Induced Electron Transfer in the Chlorophyll-Quinone Systems" from the Photochemistry and Photobiology 1971, vol. 13, pp. 113-121.
"Ion-Sensitive Field-Effect Transistors with Inorganic Gate Oxide for pH Sensing" from IEEE Transactions on Electron Devices, vol. ED-29, No. 12, Dec. 1982, pp. 1936-1941.
"Ion-Sensitive Field Effect Transistors and Related Devices" from Analytical Chemistry, vol. 47, No. 2, Feb. 1975, pp. 255A-265A.
"Microelectronic Approaches to Solid State Ion Selective Electrodes" from Electrochimica Acta, vol. 22, pp. 1-8 (1975).
"ISFET's Using Inorganic Gate Thin Films" from IEEE Transactions on Electron Devices, vol. ED 26, No. 12, Dec. 1979, pp. 1938-1944.

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