Ion sensitive photodetector

Radiant energy – Photocells; circuits and apparatus – Photocell controlled circuit

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357 30, H01L 2356

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active

047206276

ABSTRACT:
A photodetector using a modified gate controlled diode has therein a layer of photoactive material. Photons interacting therein cause the formation of free protons which alter the electrical characteristics of the photodetector. The change in electrical characteristics is measureable and related to the intensity of photons received.

REFERENCES:
patent: 3873215 (1975-03-01), Quinlan
patent: 4665609 (1987-05-01), Henry et al.
"Gate-Controlled Diode for Ionic concentration Measurement" from the IEEE ansactions on Electron Devices, vol. Ed. 26., No. 12, Dec. 79, pp. 1945-1951.
"Proton Ejection Accompanying Light Induced Electron Transfer between Chlorophyll and Hydroquinone" from Photochemistry and Photobiology 1967, vol. 6, pp. 665-667.
"Proton Ejection Accompanying Light-Induced Electron Transfer in the Chlorophyll-Quinone System" from the Journal of Physical Chemistry, vol. 71, No. 12, pp. 113-114.
"Light Induced Proton Ejection and Electron Transfer in the Zinc Tetraphenylporphin-Benzoquinone System" from the Journal of Physical Chemistry, vol. 72, No. 5, pp. 1797-1999.
"Proton Movement Accompanying the Light Induced Electron Transfer in the Chlorophyll-Quinone Systems" from Photochemistry and Photobiology 1971, vol. 13, pp. 113-121.
"Silicon Photocells, " Hamamatsu 1983 Catalog, 1983, pp. 1 to 11.

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