Ion sensitive field effect transistor and production method...

Details Ion sensitive field effect transistor and production method... Ion sensitive field effect transistor and production method...

2011-08-30

2011-08-30

Smith, Zandra (Department: 2822)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Responsive to non-optical, non-electrical signal

C257SE29255, C438S049000, C438S018000, C438S048000, C438S422000, C438S151000, C204S416000, C204S433000

Reexamination Certificate

active

08008691

ABSTRACT:
The present invention discloses an ion sensitive field effect transistor, comprising: a GaN/sapphire layer, used as a substrate; an a-InN:Mg epilayer, deposited on the GaN/sapphire layer, used to provide a current path; a first metal contact, deposited on the a-InN:Mg epilayer to provide drain contact; and a second metal contact, deposited on the a-InN:Mg epilayer to provide source contact; and a patterned insulating layer, used to cover the first metal contact, the second metal contact and the a-InN:Mg epilayer, wherein the patterned insulating layer has a contact window defining an exposure area of the a-InN:Mg epilayer.

REFERENCES:
patent: 5833824 (1998-11-01), Benton
patent: 7361946 (2008-04-01), Johnson et al.
patent: 7829918 (2010-11-01), Yeh et al.
patent: 2008/0203431 (2008-08-01), Garcia et al.

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