Ion selective electrode

Details Ion selective electrode Ion selective electrode

1982-08-30

1983-06-14

Williams, Howard S.

Chemistry: electrical and wave energy

Apparatus

Electrolytic

204419, G01N 2726, G01N 2730

Patent

active

043881670

ABSTRACT:
An ion selective electrode having a silicon wafer substrate secured to one end of a tube made of insulating material by an adhesive agent and an ion sensitive film applied on the outer surface of silicon wafer substrate is disclosed. In order to prevent a portion of a side edge of silicon wafer substrate from being exposed to a sample liquid to be measured, the side edge of silicon wafer substrate is tapered and the ion sensitive film is applied on the tapered side edge as well as on the outer surface of silicon wafer substrate. The tapered side edge may be simply formed by effecting an anisotropic etching for a silicon wafer.

REFERENCES:
patent: 4168219 (1979-09-01), Hiiro et al.
patent: 4236987 (1980-12-01), Schindler et al.
patent: 4256561 (1981-03-01), Schindler et al.
patent: 4269682 (1981-05-01), Yano et al.

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