Ion sampling system for wafer

Details Ion sampling system for wafer Ion sampling system for wafer

2007-08-14

2007-08-14

Kornakov, M. (Department: 1746)

Cleaning and liquid contact with solids

Apparatus

With plural means for supplying or applying different fluids...

C134S095300, C134S103200, C134S105000, C134S137000, C134S155000, C134S198000, C134S902000, C156S345230, C156S345240, C422S261000

Reexamination Certificate

active

10604793

ABSTRACT:
An ion sampling method for wafer provides a wafer in a sampling chamber, wherein the wafer surface that is going to be sampled faces upward; spraying an extraction liquid continuously on the wafer surface to form a liquid film thereon; keeping the thickness of the film constant for dissolving the ion contaminants in the extraction liquid; and collecting the extract solution at the bottom of the sampling chamber.

REFERENCES:
patent: 3489608 (1970-01-01), Jacobs et al.
patent: 5601645 (1997-02-01), Nonomura et al.
patent: 5634980 (1997-06-01), Tomita et al.
patent: 6309981 (2001-10-01), Mayer et al.
patent: 6945259 (2005-09-01), Masui et al.
patent: 3-23623 (1991-01-01), None
patent: 2000-005710 (2000-01-01), None

Affiliated with

Also associated with

Rating

Ion sampling system for wafer does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Ion sampling system for wafer, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Ion sampling system for wafer will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-3848012