Radiant energy – Irradiation of objects or material – Irradiation of semiconductor devices
Patent
1992-12-08
1994-02-22
Anderson, Bruce C.
Radiant energy
Irradiation of objects or material
Irradiation of semiconductor devices
250398, H01J 37317
Patent
active
052890104
ABSTRACT:
Plasma source ion implantation is carried out within an evacuated chamber having a target, such as a semiconductor wafer, supported on a target stage, with pulses of high voltage applied to the target periodically to implant ions from a plasma into the target. The ions in the plasma are purified after formation of the plasma by passing the plasma through an ion cyclotron resonance system composed of excitation electrodes and ion collector electrodes surrounding an ion purification region, with a magnet providing a unidirectional magnetic field through the ion purification region. A radio frequency time varying electric field from the excitation electrodes drives unwanted ions having charge-to-mass ratios greater than or less than that of the desired ion species to resonance with the electric field. During resonance, the undesired ions are driven outwardly in expanding spirals until reaching the ion collector plates, where the unwanted ions are removed. The purified plasma is passed to a plasma implantation region within the chamber from which the desired ions are implanted into the target as pulses of voltage are applied to the target. The ion purification may be carried out in a periodic manner between the repetitive pulses of voltage that are applied to the target.
REFERENCES:
patent: 4464570 (1984-08-01), Allemann et al.
patent: 4471003 (1984-09-01), Cann
patent: 4588888 (1986-05-01), Ghaderi et al.
patent: 4739165 (1988-04-01), Ghaderi et al.
patent: 4761545 (1988-08-01), Marshall et al.
patent: 4764394 (1988-08-01), Conrad
patent: 4818864 (1989-04-01), Allemann
patent: 4859908 (1989-08-01), Yoshida et al.
patent: 5126163 (1992-06-01), Chan
S. Picraux, et al., "Ion Implantation of Surfaces," Scientific American, vol. 252, No. 3, 1985, pp. 102-113.
T. L. Wang, et al., "Extension of Dynamic Range in Fourier Transform Ion Cyclotron Resonance Mass Spectrometry Via Stored Waveform Inverse Fourier Transform Excitation," Analytical Chemistry, vol. 58, No. 14, Dec. 1986, pp. 2935-2938.
J. L. Shohet, et al., "A Plasma Source for Fourier Transform Mass Spectrometry" Plasma Chemistry and Plasma Processing, vol. 9, No. 2, 1989, pp. 207-215.
R. Hatakeyama, et al., "An Efficient Mass Separation by Using Traveling Waves with Ion Cyclotron Frequencies," Nuclear Instruments and Methods in Physics Research B70, 1992, pp. 21-25.
Anderson Bruce C.
Wisconsin Alumni Research Foundation
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