Ion-projection apparatus

Details Ion-projection apparatus Ion-projection apparatus

1987-11-20

1989-05-30

Berman, Jack I.

Radiant energy

Irradiation of objects or material

Irradiation of semiconductor devices

250398, H01J 37302

Patent

active

048353922

ABSTRACT:
An ion-projecting apparatus which has between the ion source and the mask, directly proximal to the mask, at least one ion optical correction element in the form of a multipole with at least eight poles and so located that there is no other deflection means between the octapole and the mask.

REFERENCES:
patent: 3845312 (1974-10-01), Allison
patent: 4158141 (1979-06-01), Seliger et al.
patent: 4370556 (1983-01-01), Stengl et al.
patent: 4385238 (1983-05-01), Westerberg et al.
patent: 4514638 (1985-08-01), Lischke et al.
patent: 4757208 (1988-07-01), McKenna et al.
Julius J. Muray, Article "Physics of Ion Beam Wafer Processing", Semiconductor International, Apr. 1984, pp. 130-135, p. 129 (introduction).

Affiliated with

Also associated with

Rating

Ion-projection apparatus does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Ion-projection apparatus, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Ion-projection apparatus will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-2154736