Ion plasma beam generating device

Details Ion plasma beam generating device Ion plasma beam generating device

2005-12-13

2005-12-13

Tran, Thuy Vinh (Department: 2821)

Electric lamp and discharge devices: systems

Discharge device load with fluent material supply to the...

Electron or ion source

C315S111710

Reexamination Certificate

active

06975073

ABSTRACT:
An electron beam device wherein a low temperature gaseous plasma is generated in a chamber divided by two parallel wire grids. A semiconductor wafer serves as a cathode drawing ions from the plasma to impinge on the wafer, generating secondary electrons that are accelerated toward an anode on the opposite side of the grids where a target resides. In order to have a beam with uniform cross-sectional flux characteristics, the semiconductor wafer is doped with a graded dopant concentration that promotes a uniform beam.

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patent: 6407399 (2002-06-01), Livesay
patent: 2003/0184235 (2003-10-01), Nakamura

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