Ion milling of thin metal films

Chemistry: electrical and wave energy – Processes and products – Vacuum arc discharge coating

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156643, C23C 1500

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active

042486882

ABSTRACT:
Metals such as platinum and palladium are preferentially removed in the presence of their metal silicides by ion milling in a noble gas atmosphere such as argon. The process can be used on semiconductor chips to remove excess platinum after platinum silicide has been formed in the contact holes.

REFERENCES:
patent: 3271286 (1966-09-01), Lepselter
patent: 3642548 (1972-02-01), Eger
patent: 3770606 (1973-11-01), Lepselter
patent: 3860783 (1975-01-01), Schmidt et al.
patent: 3975252 (1976-08-01), Fraser et al.
patent: 4135998 (1979-01-01), Gniewek et al.
J. L. Vossen and W. Kern, editors, Thin Film Processes, Academic Press, New York, 1978.

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