Semiconductor device manufacturing: process – Chemical etching – Vapor phase etching
Reexamination Certificate
2005-04-05
2005-04-05
Vinh, Lan (Department: 1765)
Semiconductor device manufacturing: process
Chemical etching
Vapor phase etching
C438S706000, C438S712000, C216S067000
Reexamination Certificate
active
06875700
ABSTRACT:
A system for plasma processing using electron-free ion-ion plasmas, wherein the substrate bias waveform is synched to a pulsed RF drive. A delay is included between the end of an RF drive pulse and the start of a bias pulse, to allow the electron population to drop to approximately zero. By using a source gas mixture which has highly electronegative components, substrate bombardment with negative ions can be achieved.
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Kanakasabapathy Sivananda K.
Overzet Lawrence J.
Board of Regents , The University of Texas System
Gardere Wynne & Sewell LLP
Vinh Lan
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