Ion implanting apparatus, having ion contacting surfaces made of

Details Ion implanting apparatus, having ion contacting surfaces made of Ion implanting apparatus, having ion contacting surfaces made of

1990-07-02

1992-07-28

Berman, Jack I.

Radiant energy

Irradiation of objects or material

Irradiation of semiconductor devices

H01J 3700

Patent

active

051343010

ABSTRACT:
An ion injecting apparatus and a process for fabricating a semiconductor integrated circuit device by using the ion implanting apparatus is provided. When a wafer, e.g., a Si wafer, is to be implanted with ions, an electrode or the like made of a highly pure Si material is used to achieve a high throughput and a high density implantation. This serves to prevent the occurrence of contamination due to sputtering of the electrode member along the beam passage in the ion implanting apparatus during the high density beam implantation.

REFERENCES:
patent: 4450031 (1984-05-01), Ono et al.
patent: 4682566 (1987-07-01), Aitken
patent: 4904902 (1990-02-01), Tamai et al.
Nuclear Instruments and Methods . . . Research, B37/38 (1989)--pp. 584-587.

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