Ion implanting apparatus for forming ion beam geometry

Details Ion implanting apparatus for forming ion beam geometry Ion implanting apparatus for forming ion beam geometry

2007-02-06

2010-06-08

Berman, Jack I (Department: 2881)

Radiant energy

Irradiation of objects or material

Irradiation of semiconductor devices

C250S492220, C250S492100, C250S492200

Reexamination Certificate

active

07732790

ABSTRACT:
An ion implanting apparatus is provided, which prevents a failure of the processing object caused by a scattering of the deposited particles of the ion species on an inner surface of a through hole of a member that forms a beam geometry of an ion beam. Since at least an inner surface of the through hole222of the member220having a through hole and being capable of forming a beam geometry is coated with a thermal spraying film, unwanted deposition of the ion species on the inner surface of the through hole222is inhibited. Moreover, since a deposition film generated on the surface of the thermal spraying film has an unoriented poly-crystalline structure that exhibits extremely higher inter-layer adhesiveness, a failure of the processing object caused by a scattering of the particles peeled-off from the deposition layer is prevented.

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Chinese Office Action dated Dec. 25, 2009 with English translation.

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