Ion implanting apparatus

Details Ion implanting apparatus Ion implanting apparatus

2006-07-18

2006-07-18

Wells, Nikita (Department: 2881)

Radiant energy

Irradiation of objects or material

Irradiation of semiconductor devices

C250S358100, C250S398000, C250S42300F, C250S397000

Reexamination Certificate

active

07078714

ABSTRACT:
The ion implanting apparatus according to this invention includes: an ion source for producing the ion beam20including desired ion species and being shaped in a sheet with a width longer than a narrow width of a substrate82,a mass separating magnet36for selectively deriving the desired ion species by bending the ion beam in a direction perpendicular to a sheet face thereof, a separating slit72for selectively making the desired ion species pass through by cooperating with the mass separating magnet36,and a substrate drive device86for reciprocatedly driving the substrate82in a direction substantially perpendicular to the sheet face20sof the ion beam20within an irradiating area of the ion beam20which has passed through a separating slit72.

REFERENCES:
patent: 5350926 (1994-09-01), White et al.
patent: 5389793 (1995-02-01), Aitken et al.
patent: 5834786 (1998-11-01), White et al.
patent: 6160262 (2000-12-01), Aoki et al.
patent: 6555831 (2003-04-01), Konishi et al.

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