Ion implanting apparatus

Radiant energy – Irradiation of objects or material – Irradiation of semiconductor devices

Reexamination Certificate

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

C250S492300, C250S492200

Reexamination Certificate

active

06933511

ABSTRACT:
An ion implanting apparatus of has a wafer cassette capable of loading a plurality of wafers, an implanting chamber including an implanting base, a cassette-transferring module for moving the wafer cassette, and a wafer-transferring module for moving the wafer from the wafer cassette to the implanting base. The wafer cassette has a plurality of irradiation trays for loading the wafer, while the implanting base has a guiding slot for guiding the irradiation tray. The cassette-transferring module includes a rack positioned on the wafer cassette, a gear for moving the wafer cassette by driving the rack through rotating, and a first stepping motor for driving the gear. The wafer-transferring module has a push plate for moving the irradiation tray from the wafer cassette to the implanting base, and a second stepping motor for driving the push plate.

REFERENCES:
patent: 4534314 (1985-08-01), Ackley
patent: 4700077 (1987-10-01), Dykstra et al.
patent: 4745281 (1988-05-01), Enge
patent: 4831270 (1989-05-01), Weisenberger
patent: 4980562 (1990-12-01), Berrian et al.
patent: 5691537 (1997-11-01), Chen et al.
patent: 6414328 (2002-07-01), Nussupov
patent: 6429442 (2002-08-01), Tomita et al.
patent: 6614027 (2003-09-01), Iwasawa
patent: 2002/0079465 (2002-06-01), Halling
patent: 2003/0001110 (2003-01-01), Enge et al.
patent: 2003/0070316 (2003-04-01), Weed et al.
patent: 385707 (1990-09-01), None
patent: 1035560 (2000-09-01), None
patent: 1037255 (2000-09-01), None

LandOfFree

Say what you really think

Search LandOfFree.com for the USA inventors and patents. Rate them and share your experience with other people.

Rating

Ion implanting apparatus does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Ion implanting apparatus, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Ion implanting apparatus will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFUS-PAI-O-3524087

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.