Ion implanting apparatus

Details Ion implanting apparatus Ion implanting apparatus

2011-06-21

2011-06-21

Souw, Bernard E (Department: 2881)

Radiant energy

Irradiation of objects or material

Irradiation of semiconductor devices

C250S492100, C250S492300, C250S492200, C250S492210

Reexamination Certificate

active

07964856

ABSTRACT:
In an ion implanting apparatus10including a separation slit20which receives an ion beam1having passed through a mass-separation electromagnet17and allows a desired type of ion to selectively pass therethrough, the separation slit20is operable to vary a shape of a gap through which the ion beam1passes. In addition, the ion implanting apparatus10includes a variable slit30which is disposed between an extraction electrode system15and the mass-separation electromagnet17so as to form a gap through which the ion beam1passes and is operable to vary a shape of the gap so as to shield a part of the ion beam1extracted from the ion source12.The ion implanting apparatus10may include both or one of the separation slit20and the variable slit30.

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