Radiant energy – Irradiation of objects or material – Irradiation of semiconductor devices
Patent
1993-04-07
1994-09-20
Berman, Jack I.
Radiant energy
Irradiation of objects or material
Irradiation of semiconductor devices
250396ML, H01J 37317
Patent
active
053491963
ABSTRACT:
An ion implanting apparatus includes a magnetic quadrupole lens disposed between an ion source and an RFQ accelerator. The magnetic quadrupole lens carries out mass spectrometry of an ion beam extracted from the ion source while converging the ion beam, and reduces the divergence of the ion beam due to the space charge effect as compared to an electrostatic quadrupole lens. The use of the magnetic quadrupole lens makes it possible to utilize to a maximum extent the ion beam extracted from the ion source and to restrict to a minimum the reduction in the current of the ion beam during passage of the ion beam, thereby making it possible to generate a high-energy ion beam having a large current on the order of several tens of milliamperes.
REFERENCES:
patent: 3909305 (1975-09-01), Boroffka et al.
Hofmann et al, Nuclear Instruments and Methods in Physics Research B50, 1990, pp. 478-480.
Yamada et al, Nuclear Instruments and Methods in Physics Research B37/38, 1989, pp. 94-97.
Amemiya et al, Nuclear Instruments & Methods in Physics Research, Section--B: Beam Interactions with Materials and Atoms, vol. B55, No. 1-4, Apr. 1991, Amsterdam, NL, pp. 339-342.
DiBitonto et al, Nuclear Instruments & Methods in Physics Research, Section--B: Beam Interactions with Materials and Atoms, vol. B21, No. 2-4, Mar. 1987, Amsterdam, NL, pp. 155-157.
Amemiya Kensuke
Hakamata Yoshimi
Sakudo Noriyuki
Tokiguchi Katsumi
Berman Jack I.
Hitachi , Ltd.
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