Ion implanting apparatus

Radiant energy – Irradiation of objects or material – Irradiation of semiconductor devices

Patent

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

250396ML, H01J 37317

Patent

active

053491963

ABSTRACT:
An ion implanting apparatus includes a magnetic quadrupole lens disposed between an ion source and an RFQ accelerator. The magnetic quadrupole lens carries out mass spectrometry of an ion beam extracted from the ion source while converging the ion beam, and reduces the divergence of the ion beam due to the space charge effect as compared to an electrostatic quadrupole lens. The use of the magnetic quadrupole lens makes it possible to utilize to a maximum extent the ion beam extracted from the ion source and to restrict to a minimum the reduction in the current of the ion beam during passage of the ion beam, thereby making it possible to generate a high-energy ion beam having a large current on the order of several tens of milliamperes.

REFERENCES:
patent: 3909305 (1975-09-01), Boroffka et al.
Hofmann et al, Nuclear Instruments and Methods in Physics Research B50, 1990, pp. 478-480.
Yamada et al, Nuclear Instruments and Methods in Physics Research B37/38, 1989, pp. 94-97.
Amemiya et al, Nuclear Instruments & Methods in Physics Research, Section--B: Beam Interactions with Materials and Atoms, vol. B55, No. 1-4, Apr. 1991, Amsterdam, NL, pp. 339-342.
DiBitonto et al, Nuclear Instruments & Methods in Physics Research, Section--B: Beam Interactions with Materials and Atoms, vol. B21, No. 2-4, Mar. 1987, Amsterdam, NL, pp. 155-157.

LandOfFree

Say what you really think

Search LandOfFree.com for the USA inventors and patents. Rate them and share your experience with other people.

Rating

Ion implanting apparatus does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Ion implanting apparatus, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Ion implanting apparatus will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFUS-PAI-O-2430124

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.