Ion implanter with ionization chamber electrode design

Details Ion implanter with ionization chamber electrode design Ion implanter with ionization chamber electrode design

2005-12-06

2008-11-18

Berman, Jack I. (Department: 2881)

Radiant energy

Irradiation of objects or material

Irradiation of semiconductor devices

C250S492200, C250S492100, C250S492300, C250S492240, C250S42300F, C250S397000, C250S281000, C250S282000, C250S3960ML, C250S306000, C315S111410, C315S111810

Reexamination Certificate

active

07453074

ABSTRACT:
An ion implanter includes an ion source for generating an ion beam moving along a beam line and a vacuum or implantation chamber wherein a workpiece, such as a silicon wafer is positioned to intersect the ion beam for ion implantation of a surface of the workpiece by the ion beam. An ion source includes a ionization chamber and an ionization chamber electrode defining an ionization chamber aperture, wherein the ionization chamber electrode includes a raised portion for generating substantially uniform electric fields in the region adjacent the ionization chamber electrode.

REFERENCES:
patent: 5026997 (1991-06-01), Benveniste
patent: 6559454 (2003-05-01), Murrell et al.
patent: 2003/0146707 (2003-08-01), Goldberg et al.
patent: 1538655 (2005-06-01), None
Int. Search Report.

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