Ion implanter with function of compensating wafer cut angle...

Details Ion implanter with function of compensating wafer cut angle... Ion implanter with function of compensating wafer cut angle...

2007-10-26

2009-11-03

Wells, Nikita (Department: 2881)

Radiant energy

Irradiation of objects or material

Irradiation of semiconductor devices

C250S492200, C250S492300, C250S440110, C250S442110, C250S398000, C250S397000

Reexamination Certificate

active

07612351

ABSTRACT:
Provided are an ion implanter for compensating for a wafer cut angle and an ion implantation method using the same. The ion implanter may include an orienter for rotating a wafer mounted on an alignment stage thereof to align a notch of the wafer and a wafer stage for mounting thereon the wafer whose notch has been aligned. The ion implanter may further include an ion implantation angle adjustment unit for adjusting an angle of the wafer stage, a cut angle measurement unit for measuring the wafer cut angle while the wafer is mounted and rotated on the alignment stage, and a controller for controlling the ion implantation angle adjustment unit to compensate for the measured wafer cut angle.

REFERENCES:
patent: 6163033 (2000-12-01), Smick et al.
patent: 7397046 (2008-07-01), Yue et al.
patent: 10-2006-0075924 (2006-07-01), None

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