Ion implanter with beam resolving apparatus and method for impla

Radiant energy – Irradiation of objects or material – Irradiation of semiconductor devices

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2505051, H01J 3709

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active

053069200

ABSTRACT:
An ion implantation apparatus including a resolving aperture-shutter assembly (31) placed in the ion beam path (18). The resolving aperture-shutter assembly includes a movable shutter (34) and a shutter housing surrounding the movable shutter (34). Selected ions in an ion beam path (18) pass through a hole (44) in movable shutter (34) when the movable shutter (34) is in a first position, and are blocked by the solid surfaces when the movable shutter (34) is in a second position. The enclosure (32, 33, 39) completely surrounds the movable shutter (34). The enclosure (32, 33, 39) includes a first aperture (42) aligned with the ion beam path (18) for allowing the selected ions to enter the enclosure and a second aperture (41) aligned with the ion beam path (18) for allowing the selected ions to exit the enclosure after passing through the hole (44) in the movable shutter.

REFERENCES:
patent: 4017403 (1977-04-01), Freeman
patent: 4847504 (1989-07-01), Aitken
patent: 4916322 (1990-04-01), Glavish et al.
patent: 4943728 (1990-07-01), Dykstra et al.
patent: 5025167 (1991-06-01), Okuda et al.
patent: 5026997 (1991-06-01), Benveniste

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