Radiant energy – Irradiation of objects or material – Irradiation of semiconductor devices
Patent
1985-09-03
1987-06-09
Anderson, Bruce C.
Radiant energy
Irradiation of objects or material
Irradiation of semiconductor devices
H01J 3700
Patent
active
046722106
ABSTRACT:
A target chamber for a mechanically scanned ion implanter in which semiconductor wafers are maintained in contact with a rotating target disk entirely by body forces, thus eliminating the need for clamping members contacting the wafer surface. The axis of the disk is inclined, and the disk is in the form of a shallow dish having an inclined rim with cooled wafer-receiving stations formed on the inner surface of the rim. Centrifugal force is relied on to force the wafers against the cooled disk. Each wafer-receiving station includes fence structures which are engaged by the wafer during loading and when the disk is spinning. The fence structures are resilient so that wafer damage and thus particulate contamination is minimized. In accordance with another aspect of the invention the ion beam is projected against the wafers obliquely to the radius of the disk as to minimize striping effects and overscan.
REFERENCES:
patent: 3384049 (1968-05-01), Capita
patent: 3659552 (1972-05-01), Briody
patent: 4011449 (1977-03-01), Ko et al.
patent: 4155011 (1979-05-01), Mark
patent: 4234797 (1980-11-01), Ryding
patent: 4254340 (1981-03-01), Complan et al.
patent: 4258266 (1981-03-01), Robinson et al.
patent: 4261762 (1981-04-01), King
patent: 4346301 (1982-08-01), Robinson et al.
PR-200 Ion Implantation System; H. M. B. Bird, J. H. Jackson, B. Weissman, N. Williams; J. Vac .Sci Technol. vol. 15, No. 3, May/Jun. 1978.
Development of Ion Implantation Systems; H. M. B. Bird, B. Weissman; The Western Electric Engineer; Fall 1981.
Armstrong Allen E.
Benveniste Victor M.
Ryding Geoffrey
Anderson Bruce C.
Eaton Corporation
Rowe D. A.
Sajovec F. M.
LandOfFree
Ion implanter target chamber does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Ion implanter target chamber, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Ion implanter target chamber will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-1830486