Ion implanter, internal structure of ion implanter and...

Details Ion implanter, internal structure of ion implanter and... Ion implanter, internal structure of ion implanter and...

2008-07-03

2011-12-20

Nguyen, Kiet (Department: 2881)

Radiant energy

Irradiation of objects or material

Irradiation of semiconductor devices

Reexamination Certificate

active

08080813

ABSTRACT:
An ion implanter includes a process chamber and a coating layer. The process chamber receives a substrate and provides a space to perform an ion implantation process on the substrate. The coating layer is disposed on an inner wall of the process chamber to reduce contamination of the substrate and includes the same material as that of the substrate.

REFERENCES:
patent: 4003770 (1977-01-01), Janowiecki et al.
patent: 6120660 (2000-09-01), Chu et al.
patent: 7824498 (2010-11-01), Parkhe et al.
patent: 2005/0260354 (2005-11-01), Singh et al.
patent: 1977351 (2007-06-01), None
patent: 05-326471 (1993-12-01), None
patent: 2001-007041 (2001-01-01), None
patent: 2002-343735 (2002-11-01), None
patent: WO 2005/114692 (2005-12-01), None
Letter dated Mar. 10, 2011 with Notice of first Office Action dated Feb. 11, 2011 for Chinese Application No. 200580020329, filed Jul. 3, 2008, 7 pages.
International Search Report PCT/KR2008/003930 dated Dec. 31, 2008, 3 pages.
Written Opinion of the International Searching Authority PCT/KR2008/003930 dated Dec. 31, 2008, 4 pages.

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