Ion-implanter having variable ion beam angle control

Details Ion-implanter having variable ion beam angle control Ion-implanter having variable ion beam angle control

1996-12-27

1997-12-09

Nguyen, Kiet T.

Radiant energy

Irradiation of objects or material

Irradiation of semiconductor devices

250398, H01J 3714

Patent

active

056963823

ABSTRACT:
An ion-implanter, having variable ion-beam angle control, that includes: an ion source for decomposing a gas into a plasma gas; a magnetic analyzer for analyzing only desired ions; an accelerating tube for accelerating the analyzed ions with an energy required to implant them; a scanner for scanning the accelerated ions on the whole surface of a wafer; a Faraday box provided between the scanner and the wafer and connected to an ammeter for measuring the amount of the implanted ions; and an ion-beam angle regulator for regulating the angle of an ion beam which passes the Faraday box. The ion-beam angle regulator includes: a magnet provided at the end of the Faraday box and applying a magnetic field to the ion beam that passes through the magnetic field so as to change the projecting angle of the ion beam; a data input for entering a required normal angle of the ion beam; a controller for setting process conditions on the basis of a signal received from the data input; and a driver for combining the signal of the controller and a voltage feedback signal of the accelerating tube so as to fix the magnitude of the magnetic field of the magnet to a level required in the process.

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