Ion implanter and method of preventing undesirable ions from...

Details Ion implanter and method of preventing undesirable ions from... Ion implanter and method of preventing undesirable ions from...

2006-04-04

2006-04-04

Lee, John R. (Department: 2881)

Radiant energy

Irradiation of objects or material

Irradiation of semiconductor devices

C250S492100, C250S492200, C250S492300, C250S281000, C250S282000

Reexamination Certificate

active

07023003

ABSTRACT:
An ion implanter is provided having an ion source; an AMU analyzing magnet having a fixed radius Ram; an ion extraction voltage source; a communication interface for monitoring implantation parameters; and an equipment server having a data log. The ion implanter further has an arithmetic processor capable of determining a real-time estimated radius Reof a circular path of ions being implanted into a target wafer. A method of using the ion implanter provide an interlock on an AMU of each of a plurality of ions being implanted into the target wafer. The method has the step of determining in real-time if an ion implanter is implanting a desired ion into a target wafer. Also, the method determines if an absolute value of an offset between the Ramand Reexceeds a predetermined radius tolerance level L and adjusts the implanter accordingly if L is exceeded.

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