Ion implanter and method for adjusting ion beam

Details Ion implanter and method for adjusting ion beam Ion implanter and method for adjusting ion beam

2009-05-27

2010-10-05

Wells, Nikita (Department: 2881)

Radiant energy

Irradiation of objects or material

Irradiation of semiconductor devices

C250S3960ML, C250S3960ML, C250S492300, C313S361100, C315S111410

Reexamination Certificate

active

07807986

ABSTRACT:
An ion implanter and method for adjusting the shape of an ion beam are disclosed. After an ion beam is outputted from an analyzer magnet unit, at least one set of bar magnets is used to adjust the shape of the ion beam when the ion beam passes through a space enclosed by the bar magnets. The set of bar magnets can apply a multi-stage magnetic field on the ion beam. Hence, different portions of the ion beam will have different deformations or alterations, because the multi-stage magnetic field will apply a non-uniform force to change the trajectory of ions. Moreover, each bar magnet of the set is powered by one and only one power source, such that the set of bar magnets essentially only can adjust the magnitude of the multi-stage magnetic field. Particular structures and techniques for achieving the multi-stage magnetic field are not limited.

REFERENCES:
patent: 5032202 (1991-07-01), Tsai et al.
patent: 5691537 (1997-11-01), Chen et al.

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