Ion implanter and controlling method therefor

Details Ion implanter and controlling method therefor Ion implanter and controlling method therefor

1992-04-08

1994-03-08

Berman, Jack I.

Radiant energy

Irradiation of objects or material

Irradiation of semiconductor devices

250251, 250398, H01J 37317

Patent

active

052935086

ABSTRACT:
An ion implanter encloses a semiconductor substrate adjacent to a fixing member which retains a semiconductor substrate on a supporting bed. The ion implanter includes a ring electrode for generating secondary electrons in response to incident ions and a cup-like electrode for directing the secondary ions to the semiconductor substrate. The ring electrode is negatively biased with respect to the supporting bed and the cup-like electrode surrounds the outer edge of the semiconductor substrate. The ion implanter increases the quantity of the secondary electrons produced and efficiently directs them to the semiconductor substrate. The semiconductor substrate which is electrically charged by implanting ions is neutralized, preventing dielectric breakdown from occurring in an insulating film.

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