Ion implanter

Details Ion implanter Ion implanter

1995-05-30

1998-03-17

Nguyen, Kiet T.

Radiant energy

Irradiation of objects or material

Irradiation of semiconductor devices

250398, H01J 37317

Patent

active

057290270

ABSTRACT:
An ion implanter for implementing ion implantation using mass-separated ions using a limited energy of less than 10 keV, locates the decelerator between the ion source and the mass separator, and the beam transport space provided between the ion source and the decelerator is maintained at a higher negative voltage so as to decelerate the ion beam in combination, ensuring a large-current ion beam in excess of 1 mA to be maintained on the surface of a target.

REFERENCES:
patent: 3970854 (1976-07-01), Boroffka et al.
patent: 4754200 (1988-06-01), Plumb et al.
patent: 4782304 (1988-11-01), Aitken
patent: 5306922 (1994-04-01), O'Connor

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