1975-10-14
1977-09-27
Lynch, Michael J.
357 89, 357 90, 357 91, H01L 2990
Patent
active
040515044
ABSTRACT:
A zener diode having an accurately predetermined breakdown voltage, and a method of making such a zener diode. A discrete device and integrated circuit adaptation of this device is disclosed. A specially highly doped opposite conductivity type island is embedded in a high resistivity body portion. Embedded in the body portion contiguous the island is an ion implanted surface portion of the one conductivity type. The surface portion has an accurately predetermined concentration of conductivity determining impurity atoms in the range of about 1 .times. 10.sup.16 to 1 .times. 10.sup.19 atoms per cubic centimeter. A PN junction having a high breakdown voltage separates the island from the body. A PN junction having a lower but accurately predetermined breakdown voltage separates the island from the surface portion and forms a zener junction. In integrated circuit adaptations, this device preferably shares a transistor electrode for a transistor junction that is to be protected from overvoltage effects.
REFERENCES:
patent: 3244949 (1966-04-01), Hilbiber
patent: 3470390 (1969-09-01), Lin
patent: 3611058 (1971-10-01), Jordan
patent: 3633052 (1972-01-01), Hanna
patent: 3667009 (1972-05-01), Rugg
patent: 3717516 (1973-02-01), Hatcher et al.
patent: 3735210 (1973-05-01), Kaush et al.
patent: 3882529 (1975-05-01), Warner
patent: 3943554 (1976-03-01), Russel et al.
"Electronics", Apr. 26, 1971. p. 42.
Clawson Jr. Joseph E.
General Motors Corporation
Lynch Michael J.
Wallace Robert J.
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