Ion implanted semiconductor device

Details Ion implanted semiconductor device Ion implanted semiconductor device

1988-03-25

1989-09-19

Edlow, Martin H.

357 231, 357 2312, 357 2314, H01L 2978

Patent

active

048686182

ABSTRACT:
A conductor-dielectric-semiconductor device and a method of making such a device which has an insulating silicon-dioxide dielectric layer on a silicon substrate, and a conductive layer over a region of the dielectric layer. Silicon ions have been implanted into the region under the conductive layer. Depending upon the thickness of the region and the concentration of implanted silicon ions, the device can function as an IGFET memory device or a vertical resistor between the conductive layer and the substrate.

REFERENCES:
patent: Re31083 (1982-11-01), DeKeersmaecker et al.
patent: 4344222 (1982-08-01), Bergeron
patent: 4432072 (1984-02-01), Chao
patent: 4458407 (1984-07-01), Hoeg
patent: 4471471 (1984-09-01), DiMaria
patent: 4656729 (1987-03-01), Kroll
patent: 4717943 (1988-01-01), Wolf
patent: 4733482 (1988-03-01), West

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